Parameter Extraction Software For Compact Diode Model
نویسندگان
چکیده
I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantooth's Comprehensive SiC Diode model [cNutt et al, 2001, 2002). This software can be used for traction of any other device model parameters with little adification (Ma et al., 1994; Krishna et al, 1995., Bai et al., 01;Lauxetal., 1991).
منابع مشابه
An Optimization Method of Deep Submicron SOI Compact Model Parameter Extraction
As Silicon-On-Insulator (SOI) rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) device parameter extraction. However, the underlying physics of these two devices is quite different, and therefore, have distinctively different char...
متن کاملParameter Extraction Software for Silicon Carbide Schottky, Merged Pin Schottky and Pin Power Diode Models
A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].
متن کاملAn Alternative Method for Compact Model Construction and Parameter Extraction
The conventional method to extract circuit parameters from device simulators is through I-V and C-V curve-fitting on a presumed device model, whose basic form is often analytically derived using drift-diffusion equations with space-charge-region approximation. The resulting device model is usually either too simple to reflect detailed device behaviors or too complex that most of its internal pa...
متن کاملComprehensive Simulation for Two-diode Model of Photovoltaic Cells in SimPowerSystems Using Explicit Mathematical Functions
In this paper, using Thevenin’s theorem and also nonlinear Lambert W function, a novel two-diode model of photovoltaic cells is presented in mathematical explicit manner. In comparison with existing explicit models in the literature which are valid exclusively for n2=n1 and n2=2n1, this model includes a wide range of silicon-based cells with arbitrary diodes ideality factors. Acquiring regulati...
متن کاملA Unified Environment for the Modeling of Ultra Deep Submicron MOS Transistors
This paper discusses the aspects of modern MOS modeling requirements. Starting from the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation model, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for ef...
متن کامل